Shyh-Chiang Shen received his Ph.D. degree in electrical engineering at the University of Illinois at Urbana-Champaign (UIUC) in 2001. He was a key contributor of high-cycle low-voltage radio-frequency (RF) microelectromechanical system (MEMS) switches and GaAs metal-semiconductor field effect transistors (MESFETs) millimeter-wave integrated circuits (MMICs) during his tenure at UIUC. At Xindium Technologies (2000-2004), he developed a proprietary commercial-grade InP single-heterojunction bipolar transistor (SHBT) technology that led to the first demonstration of monolithically integrated 40Gb/s PIN+TIA differential-output optical receivers.
Dr. Shen joined the Georgia Institute of Technology in 2005 as an Assistant Professor and was promoted a Full Professor in 2018. His research has yielded 8 awarded U.S. patents, 5 book chapters, 170+ publications in refereed journals and conferences, and many invited seminar talks to date. He is also an editor of a book entitled Nitride Semiconductor LEDs (2nd Ed., October 2017.) His current research is focused on wide bandgap semiconductor (WBG) microelectronics and optoelectronic devices with emphasis on physical device study, fabrication processing technique development, and device characterizations.
- High sensitivity, III-nitride-based UV photodetectors
- Advanced III-nitride coherent light emitters
- III-nitride transistor technologies (unipolar and bipolar transistors)
- WBG high power electronics
- Compound-semiconductor Integrated circuit technologies
- Sustainable, “green” technologies
- **Students interested in these research areas are encouraged to contact Prof. Shen directly.
- Gregory E. Stillman Semiconductor Research Award, 2000, UIUC
- Gregory E. Stillman Fellowship, 2001, UIUC
- Richard M. Bass Outstanding Teacher Award, School of ECE, Georgia Tech, 2010
- Outstanding Junior Faculty Member Award, School of ECE, Georgia Tech, 2011
- Outstanding Undergraduate Research Mentor Award, Georgia Tech, 2012
- Senior Member, IEEE
- Fellow, OSA
"High-responsivity GaN/InGaN heterojunction phototransistors,” T. Kao, J. Kim, T. Detchprohm, R. Dupuis and S.-C. Shen, IEEE Photonics Technology Letters, 28, 2035, 2016.
“GaN/InGaN avalanche phototransistors,” S.-C. Shen, T. Kao, H. Kim, Y. Lee, J. Kim, M. Ji, J. Ryou, T. Detchprohm and R. Dupuis, Applied Physics Express 8, 032101, 2015.
“A remote oxygen plasma surface treatment technique for III-nitride heterojunction field-effect transistors,” Y. Lee, T. Kao, J. Merola and S.-C. Shen, IEEE Transactions on Electron Device, 61, 493, 2014.
“Sub-250 nm, low-threshold deep-ultraviolet AlGaN-based heterostructure laser employing HfO2/SiO2 dielectric mirrors,” T. Kao, Y. Liu, M. Satter, X. Li, Z. Lochner, P. Yoder, T. Detchprohm, R. Dupuis, S.-C. Shen, J. Ryou, A. Fischer, Y. Wei, H. Xie, F. Ponce, Applied Physics Letters 103, 211103, 2013.
“Working toward high-power GaN/InGaN Heterojunction Bipolar Transistors,” S.-C. Shen, R. D. Dupuis, A. Lochner, Y. Lee, T.T. Kao, Y. Zhang, H.-J. Kim and J.-H Ryou, Semiconductor Science and Technology, 28 (7), 074025 (8 pp), 2013.
“GaN/InGaN heterojunction bipolar transistors with ultra-high d.c. power density > 3 MW/cm2,” Y. Lee, Y. Zhang, Z. Lochner, H. Kim, J. Ryou, R. Dupuis, and S.-C. Shen, Phys. Stat. Solidi(a) 209, 497, 2012.
"GaN/InGaN heterojunction bipolar transistors with fT > 5 GHz," S.-C. Shen, R. D. Dupuis, Y.-C. Lee, H.-J. Kim, Y. Zhan, Z. Lochner, P. D. Yoder, and J.-H. Ryou, IEEE Electron Device Letters, vol. 32, no. 8, pp. 1065-1067, August 2011.
"Effects of a step-graded AlxGa1-xN electron blocking layer in InGaN-based laser diodes," Y. Zhang, T.-T. Kao, J.-P. Liu, Z. Lochner, S.-S. Kim, J.-H. Ryou, R. D. Dupuis, and S.-C. Shen, Journal of Applied Physics, vol. 109, p. 083115, 26 April 2011.
"High-current-gain direct-growth GaN/InGaN double heterojunction bipolar transistors," Y.-C. Lee, Y. Zhang, H.-J. Kim, S. Choi, Z. Lochner, R. D. Dupuis, J.-H. Ryou, and S.-C. Shen, IEEE Transactions on Electron Devices, vol. 57, no. 11, pp. 2964-2969, November 2010.
"Low-noise GaN ultraviolet p-i-n photodiodes on GaN substrates," Y. Zhang, S.-C. Shen, H.-J. Kim, S. Choi, J.-H. Ryou, R. D. Dupuis, and B. Narayan, Applied Physics Letters, vol. 94, pp. 221109, June 4, 2009.
"Device Technologies for RF Front-end Circuits in the Next Generation Wireless Communications," M. Feng, S.C. Shen, D. Caruth, and J-J Huang, invited paper, in Proc. IEEE, vol. 92, no.2, pp. 354-375, Feb. 2004.
Last revised August 31, 2020