Photo file: 
Full name: 
Gary S May
Job title: 
Dean Academic
; Dean; College of Engineering; Professor
Email address: 
Work phone: 
404/894-6825
Fax: 
404.894.0168
Office: 
COE 301A

Gary S. May is the dean of the College of Engineering at the Georgia Institute of Technology, ranked number 4 in U.S. News & World Report's annual list of the best American graduate engineering programs. From May 2005-June 2011, he served as the Steve W. Chaddick School Chair of the School of Electrical and Computer Engineering, and previous to that, he was the executive assistant to Georgia Tech President G. Wayne Clough from 2002-2005.

Dr. May joined the ECE faculty in 1991 as a member of the School's microelectronics group. His research is in the field of computer-aided manufacturing of integrated circuits. He was a National Science Foundation "National Young Investigator" (1993-98) and was Editor-in-Chief of IEEE Transactions on Semiconductor Manufacturing (1997-2001). He has authored over 200 articles and technical presentations in the area of IC computer-aided manufacturing. In 2001, he was named Motorola Foundation Professor, and was appointed associate chair for Faculty Development.

Dr. May is the founder of Georgia Tech's Summer Undergraduate Research in Engineering/Science (SURE) program, a summer research program designed to attract talented minority students into graduate school. He also is the founder and director of Facilitating Academic Careers in Engineering and Science program (FACES), a program designed to encourage minority engagement in engineering and science careers. Dr. May was a National Science Foundation and an AT&T Bell Laboratories graduate fellow, and has worked as a member of the technical staff at AT&T Bell Laboratories in Murray Hill, NJ. He is a member of the National Advisory Board of the National Society of Black Engineers (NSBE).

Dr. May is a native of St. Louis, Missouri. He received the B.E.E. degree in electrical engineering from the Georgia Institute of Technology in 1985 and the M.S. and Ph.D. degrees in electrical engineering and computer science from the University of California at Berkeley in 1987 and 1991, respectively.

Research interests: 
  • Computer-aided manufacturing of integrated circuits and devices
  • Monitoring, modeling, simulation, control and diagnosis of semiconductor fabrication processes
  • IC design for manufacturability
  • IC yield modeling
  • Computer-enhanced education
Distinctions: 
  • Father of the Year, given by the Father's Day Council of Atlanta and the American Diabetes Association (2011)
  • Outstanding Alumni Award in Electrical Engineering, University of California at Berkeley (2010)
  • American Association for the Advancement of Science Fellow (2008)
  • American Association for the Advancement of Science Mentor Award (2006)
  • NSBE Golden Torch Award: Janice A. Lumpkin Educator of the Year (2006)
  • IEEE Fellow (2005)
  • Motorola Foundation Professorship (2001-2005)
  • ASEE Minorities in Engineering Award (2004)
  • Georgia Tech Outstanding Undergraduate Research Mentor Award (2004)
  • Who's Who among African Americans (2004)
  • Wickenden Award for Outstanding Paper, Journal of Engineering Education (2003)
  • Giant of Science Award from Quality Education for Minorities Network (2002)
  • Who's Who in Engineering Education (2002)
  • Selected by the National Academy of Engineering to Participate in Frontiers of Engineering Conference as one of "the nation's top 100 engineers between the ages of 30-45" (2000)
  • Outstanding Paper Award, IEEE Transactions on Semiconductor Manufacturing (1998, 2000)
  • Georgia Tech Outstanding Service Award (1999)
  • National Science Foundation National Young Investigator (1993-98)
  • Outstanding Young Alumnus, Georgia Institute of Technology (1993)

G. Triplett, A. Brown, and G. May, "Interrelationships in the Electronic and Structural Characteristics ofStrained InAs Quantum Well Structures," J. Crystal Growth, vol. 286, pp. 345-349, Jan., 2006.

T. Brown and G. May, "Hybrid Neural Network Modeling of Anion Exchange at the Interfaces of Mixed AnionIII-V Heterostructures grown by Molecular Beam Epitaxy," IEEE Trans. Semi. Manufac., vol. 18, no. 4, pp.614-621, Nov., 2005.

S. Hong, G. May, and D. Park, "Neural Network Based Sensor Fusion of Optical Emission and MassSpectroscopy Data for Real-Time Fault Detection in Reactive Ion Etching," IEEE Trans. Ind. Elec., vol. 52, no.4, pp. 1063-1072, Aug., 2005.

J. Sutano, R. Setia, A. Papania, G. May, and P. Hesketh, "Using Neural Networks to Model an Electromagnetic-Actuated Microactuator," submitted to J. Micromech. and Microeng., July, 2005.

R. Pratap, P. Sen, C. Davis, G. May, and J. Laskar, "Neuro-Genetic Design Centering," submitted to IEEETrans. Semi. Manufac., July, 2005.

R. Pratap, S. Pinel, J. Laskar, and G. May, "Modeling and Sensitivity Analysis of Circuit Parameters for FlipChip Interconnects Using Neural Networks," IEEE Trans. Adv. Pack., vol. 28, no. 1, pp. 71-78, Feb., 2005.

G. Triplett, A. Brown, and G. May, "Charge Modification in InAs/AlxGa1-xSb HEMT Structures," J. CrystalGrowth, vol. 265, no. 1-2, pp. 47-52, March, 2004.

A. Brown, M. Losurdo, G. Bruno, T. Brown, and G. May, "Fundamental Reactions Controlling AnionExchange During the Synthesis of Sb/As Mixed Anion Heterojunctions," J. Vac. Sci. & Tech. B, vol. 22, no. 4,Jul/Aug, 2004.

S. Bhattacharya, R. Doraiswami, L. Conrad, G. May, and R. Tummala, "Development and Implementation of aHands-On, Multidisciplinary, Product Development Course Series at Georgia Tech," World Trans. Eng. Tech.Edu., vol. 2, no. 3, pp. 407-410, 2004.

G. May, Z. Wang, and A. Brown, "Mixed Anion Heterostructure Materials," Air Force Research Laboratory,Final Report, AFRL-ML-WP-TR-2004-4291, July, 2004.

S. Hong, G. May, S. Lee, and D. Park, "Modular Neural Networks for Semiconductor Mannufacturing ProcessModeling and Characterization: Application to Plasma Processing," Intelligent Engineering Systems ThroughArtificial Neural Networks, vol. 14, pp. 935-940, (C.H. Dagli, Ed.), New York: ASME Press, 2004.

F. Williams and G. May, "Acoustic Monitoring of Electrochemical Deposition," IEEE Trans. Elec. Pack.Manufac., vol. 27, no. 3, pp. 198-209, July, 2004.

G. May, "Intelligent SOP Manufacturing," Invited Paper, IEEE Transactions on Advanced Packaging, vol.27, no. 2, pp. 426-437, May, 2004.

R. Setia and G. May, "Modeling and Optimization of Via Formation in Dielectrics by Laser Ablation UsingNeural Networks and Genetic Algorithms," IEEE Trans. Elec. Pack. Manufac., vol. 27, no. 2, pp. 133-144,April, 2004.

S. Hong and G. May, and D. Park, "Neural Network Based Real-Time Malfunction Diagnosis of Reactive IonEtching Using In-Situ Metrology Data," IEEE Trans. Semi. Manufac., vol. 17, no. 3, pp. 408-421, Aug., 2004.

S. Hong, G. May, and D. Park, "Neural Network Modeling of Reactive Ion Etching Using Optical EmissionSpectroscopy Data," IEEE Trans. Semi. Manufac., vol. 16, no. 4, pp. 598-608, Nov., 2003.

S. Bhattacharya, K. Moon, R. Tummala, and G. May, "Meniscus Coating: A Low-Cost Polymer DepostionMethod for System-on-Package (SOP) Substrates," IEEE Trans. Elec. Pack. Manufac., vol. 26, no. 2, pp. 110-114, April, 2003.

G. May and S. Sze, Fundamentals of Semiconductor Fabrication, New York, NY: Wiley, 2003.

T. Brown, A. Brown, and G. May, "Anion Exchange at the Interfaces of Mixed Anion III-V HeterostructuresGrown by Molecular Beam Epitaxy," J. Vac. Sci. & Tech. B, vol. 20, no. 4, July/August, 2002.

S. Hong, G. May, and D. Park,"Modeling Optical Emission Spectroscopy Data Generated during Reactive IonEtching using an Autoencoder Neural Network," Intelligent Engineering Systems Through Artificial NeuralNetworks, vol. 10, pp. 945-950, (C.H. Dagli, Ed.), New York: ASME Press, 2002. Nominated for Best PaperAward.

T. Kim and G. May, "Time Series Modeling of Photosensitive Polymer Development Rate for Via FormationApplications," IEEE Trans. Elec. Pack. Manufac., vol. 25, no. 3, pp. 203-209, July, 2002.

S. Lee, J. Choi, G. May, and I. Yun, "Modeling and Analysis of 3-D Solenoid Embedded Inductors UsingMonte Carlo Simulation," IEEE Tran. Elec. Pack. Manufac., vol. 25, no. 1, January, 2002.

Y. Wang, Z. Wang, T. Brown, A. Brown, and G. May, "Thermodynamic Analysis of Anion Exchange DuringHeteroepitaxy," J. Crystal Growth, vol. 242, p. 5, 2002.

G. Triplett, G. May, and A. Brown, "Modeling Electron Mobility in MBE-Grown InAs/AlSb Thin Films forHEMT Applications Using Neural Networks," Solid State Electronics, vol. 46, no. 10, pp. 1519-1524, Oct.,2002.

G. May, "Optical Methods for Monitoring, Modeling, and Controlling Semiconductor ManufacturingProcesses," Chapter 17 in Opto-Mechatronic Systems Handbook: Techniques and Applications (H. Cho, Ed.),Boca Raton, FL: CRC Press, 2002.

S. Bhattacharya, S. Bhatevara, E. Kamen, and G. May, "An Automated Workcell for Meniscus Coating onLarge-Area Packaging Substrates," IEEE Tran. Comp. Pack. Tech., vol. 24, no. 4, pp. 625-630, Dec., 2001.

G. May, "Fundamentals of Package Manufacturing," Chapter 20 in Fundamentals of Microsystems Packaging,(R. Tummala, Ed.), New York, NY: McGraw-Hill, 2001.

D. Stokes and G. May, "Indirect Adaptive Control of Reactive Ion Etching Using Neural Networks," IEEETrans. Robotics & Automation, vol. 17, no. 5, pp. 650-657, Oct., 2001.

G. May, "Computational Intelligence in Microelectronics Manufacturing," Chapter 13 in the Handbook ofComputational Intelligence in Design and Manufacturing (J. Wang and A. Kusiak, Eds.), Boca Raton, FL: CRCPress, 2001.

I. Yun, R. Poddar, L. Carastro, M. Brooke, and G. May, "Statistical Analysis of Embedded Capacitors UsingCarlo Analysis," ETRI Journal, vol. 23, no. 1, pp. 23-32, March, 2001.

R. Chinnam and G. May, "Role of Neural Networks and Genetic Algorithms in Developing Intelligent QualityControllers for On-line Parameter Design," International Journal of Smart Engineering System Design, vol. 3,pp. 51-64, 2001.

Y. Wang, Z. Wang, T. Brown, A. Brown, and G. May, "Interfacial Roughening in Lattice Matched GaInP/GaAs Heterostructures, Thin Solid Films, vol. 397, p. 162, 2001.

K. Lee, W. Doolittle, A. Brown, G. May, and S. Stock, "A Comparative Study on Surface Reconstruction ofWurtzite GaN on (0001) Sapphire by RF Plasma-Assisted Molecular Beam Epitaxy," J. Crystal Growth, vol.231, pp. 8-16, 2001.

K. Lee, T. Kim, W. Doolittle, A. Brown, G. May, and S. Stock, "Using Statistical Experimental Design toInvestigate the Role of the Initial Growth Conditions on GaN Epilayers Grown by MBE," J. Vac. Sci. & Tech.B, vol. 18, no. 3, pp. 1448-1452, May/June, 2000.

Y. Wang, Z. Wang, T. Brown, A. Brown, and G. May, "Configurations of Misfit Dislocations at Interfaces ofLattice-Matched GaInP/GaAs Heterostructures," Appl. Phys. Lett., vol. 77, pp. 223-225, 2000.

I. Yun, R. Poddar, L. Carastro, G. May, and M. Brooke, "Extraction of Passive Device Model ParametersUsing Genetic Algorithms," ETRI Journal, vol. 22, no. 1, March, 2000.

D. Stokes and G. May, "Real-Time Control of Reactive Ion Etching Using Neural Networks," IEEE Trans.Semi. Manufac., vol. 13, no. 4, pp. 469-480, Nov., 2000. Winner for 2000 Best Paper Award.

K. Lee, T. Brown, G. Dagnall, R. Bicknell-Tassius, A. Brown, and G. May, "Using Neural Networks toConstruct Models of the Molecular Beam Epitaxy Process," IEEE Trans. Semi. Manufac., vol. 13, no. 1, pp. 34-45, Feb., 2000.

R. Chinnam, J. Ding, and G. May, "Intelligent Quality Controllers for On-Line Parameter Design," IEEETrans. Semi. Manufac., vol. 13, no. 4, pp. 481-491, Nov., 2000.

J. Geisler, C. Lee, and G. May, "Neuro-Fuzzy Modeling of Chemical Vapor Deposition Processes," IEEETrans. Semi. Manufac., vol. 13, no. 1, pp. 46-60, Feb., 2000.

Y. Pei and G. May, "Neural Network Based Adaptive Process Control of a Reactive Ion Etching System,"Intelligent Engineering Systems Through Artificial Neural Networks, vol. 10, pp. 845-850, (C.H. Dagli, Ed.),New York: ASME Press, 2000. Nominated for Best Paper Award

S. Bhattacharya, S. Bhatevara, H. Morales, S. Kauffman, E. Kamen, and G. May, "An Automated MeniscusCoating System for Polymer Deposition on Large-Area MCM-D and MCM-L Substrates," IEEE Tran. Elec.Pack. Manufac., vol. 23, no. 4, Oct., 2000.

Y. Wang, Z. Wang, T. Brown, A. Brown, and G. May, "A New Misfit Dislocation Configuration at Interfacesof Lattice-Matched GaInP/GaAs Heterostructures," Appl. Phys. Lett., July 10, 2000.

Y. Wang, Z. Wang, T. Brown, A. Brown, and G. May, "Lateral Compositional Modulation in Lattice-MatchedGaInP/GaAs Heterostructures," J. Elec. Mat., vol. 29, no. 12, pp. 1372-1379, Dec., 2000.

Last revised July 10, 2017