Azadeh Ansari received the B.S. degree in Electrical Engineering from Sharif University of Technology, Iran in 2010. She earned the M.S and Ph.D. degrees in Electrical Engineering from University of Michigan, Ann Arbor in 2013 and 2016 respectively, focusing upon III-V semiconductor and MEMS devices and microsystems for RF applications. Prior to joining the ECE faculty at Georgia Tech, she was a postdoctoral scholar in the Physics Department at Caltech from 2016 to 2017.
Dr. Ansari is the recipient of a 2017 ProQuest Distinguished Dissertation Award from the University of Michigan for her research on “Gallium Nitride integrated microsystems for RF applications.” She received the University of Michigan Richard and Eleanor Towner Prize for outstanding Ph.D. research in 2016. She is a member of IEEE, IEEE Sensor’s young professional committee and serves as a technical program committee member of IEEE IFCS 2018.
- Nano/micro-electro-mechanical systems
- Resonant devices for timing, sensing, and RF applications
- Nonlinear and nonreciprocal devices
- CMOS and beyond-CMOS integrated microsystems
- III-V electro-acoustic devices, HEMTs, and circuits
- 2017 ProQuest Distinguished Dissertation Award from the University of Michigan
- 2016 University of Michigan Richard and Eleanor Towner Prize
- Member, IEEE
- Member, IEEE Sensor’s Young Professional Committee
- Technical Program Committee Member, IEEE IFCS 2018
A. Ansari and M. Rais-Zadeh, “Coupled UHF ring resonators with Shottky transducers,” Journal of MEMS Letters, vol. 26, no. 4, pp. 740-742, April 2017.
A. Ansari, H. Zhu, and M. Rais-Zadeh, “Gallium Nitride High-Order mode Lamb-wave Resonators and Delay Lines,” Solid-State Sensors, Actuators and Microsystems Workshop (Hilton Head’16), pp. 456-457, June 2016.
A. Ansari and M. Rais-Zadeh, “Depletion-mediated piezoelectric AlGaN/GaN resonators,” Physica Status Solidi (pss) (a), DOI: 10.1002/pssa.201532746, April 2016.
A. Ansari and M. Rais-Zadeh, “Frequency-tunable current-assisted AlGaN/GaN resonators,” IEEE International Conference on Micro Electro Mechanical Systems (MEMS’16), pp. 123-126, Shanghai, China, Jan. 2016.
H. Zhu, A. Ansari, and M. Rais-Zadeh, “Observation of acoustoelectric effect in micromachined Lamb wave delay lines with AlGaN/GaN heterostructure," IEEE International Electron Device Meeting (IEDM’16), pp. 26.6. 1-26.6. 4, Dec. 2016.
A. Ansari, R. Tabrizian, M. Rais-Zadeh, “A high-Q AlGaN/GaN phonon trap with integrated HEMT read-out,” International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers’15), Anchorage, Alaska, pp. 2256-2259, June 2015.
M. Rais-Zadeh, V. Gokhale, A. Ansari, M. Faucher, D. Theron, Y. Cordier, L. Buchaillot, “Gallium Nitride as an electromechanical material,” Journal of Microelectromechanical Systems (JMEMS), vol. 23, no. 6, pp. 1252–1271, Dec. 2014.
A. Ansari and M. Rais-Zadeh, “A temperature-compensated gallium nitride micromechanical resonator,” IEEE Electron Device Letters (EDL), vol. 35, no. 11, pp. 1127-1129, Nov. 2014.
A. Ansari and M. Rais-Zadeh, “An 8.7 GHz GaN micromechanical resonator with an integrated AlGaN/GaN HEMT,” Solid-State Sensors, Actuators and Microsystems Workshop (Hilton Head’14), Hilton Head, SC, pp. 295-296, June 2014.
A. Ansari and M. Rais-Zadeh, “A Thickness-Mode AlGaN/GaN Resonant Body Transistor,” IEEE Transactions on Electron Devices (T-ED), vol. 61, no. 4, pp. 1006–1013, Apr. 2014.
A. Ansari, V. J. Gokhale, J. Roberts, and M. Rais-Zadeh, “Monolithic Integration of GaN Micromechanical Resonators and HEMTs,” IEEE International Electron Device Meeting (IEDM’12), San Francisco, CA, pp. 15.5.1 - 15.5.4, Dec. 2012.
A. Ansari, V. Gokhale, V. Thakar, J. Roberts, M. Rais-Zadeh, “GaN-on-Silicon Micromechanical Overtone Resonators and Filters,” IEEE International Electron Device Meeting (IEDM’11), Washington, DC, pp. 20.3.1 - 20.3.4, Dec. 2011.
Last revised September 1, 2020