Asif Khan is an Assistant Professor in the School of Electrical and Computer Engineering with a courtesy appointment in the School of Materials Science and Engineering at the Georgia Institute of Technology. Dr. Khan’s research focuses on microelectronic devices, specifically on ferroelectric devices that address the challenges faced by the semiconductor industry due to the end of transistor miniaturization. His research group at Georgia Tech focuses on all aspects of ferroelectricity ranging from materials physics, growth, and electron microscopy to micro-/nano-fabrication of electronic devices, all the way to ferroelectric circuits and systems for artificial intelligence, machine learning, and data-centric applications.
Dr. Khan’s notable awards include the DARPA Young Faculty Award (2021), the NSF CAREER Award (2021), the Intel Rising Star Award (2020), the Qualcomm Innovation Fellowship (2012), TSMC Outstanding Student Research Award (2011), and the University Gold Medal from Bangladesh University of Engineering and Technology (2011). His research portfolio includes 2 book chapters; >70 journal and peer-reviewed conference publications including in IEEE Transactions on Electron Devices, IEEE Electron Device Letters, Nature Electronics, Nature Materials, IEEE International Electron Devices Meeting (IEDM), Nano Letters, and Nature; >20 invited talks and tutorials at premier microelectronics and ferroelectric conferences including ISAF, IEDM, MRS, EMA, AVS, and EMA; and 1 pending patent with Intel. His group at Georgia Tech consists of six Ph.D. students of diverse backgrounds, including two female students, and 3 research engineers, many of whom won Institute-level and international awards, including an IEEE Electron Devices Society (EDS) Masters Student Fellowship. Dr. Khan developed a graduate course on Quantum Computing Devices and Hardware, as a part of the campus-wise response to national prioritization of quantum computing that is known as the National Quantum Initiative Act (NQIA). He received the Class of 1934 CIOS Honor Roll award for excellence in teaching this course in Fall 2020.
- DARPA Young Faculty Award (2021)
- NSF CAREER Award (2021)
- Intel Rising Star Award (2020)
- Qualcomm Innovation Fellowship (2012)
- University Gold Medal, Bangladesh University of Engineering and Technology (2011)
A. I. Khan, A. Keshavarzi, and S. Datta. “The future of ferroelectric field-effect transistor technology.” Nature Electronics 3, 588 (2020).
S. Lombardo, C. Nelson, K. Chae, S. Reyes-Lillo, M. Tian, N. Tasneem, Z. Wang, M. Hoffmann, D. Triyoso, S. Consiglio, K. Tapily, R. Clark, G. Leusink, K. Cho, A. Kummel, J. Kacher, and A. I. Khan. “Atomic-scale imaging of polarization switching in an (anti-) ferroelectric memory material: Zirconia (ZrO2).” Proceedings of 2020 IEEE Symposium on VLSI Technology.
Z. Wang, B. Crafton, J. Gomez, R. Xu, A. Luo, Z. Krivokapic, L. Martin, S. Datta, A. Raychowdhury, A. I. Khan, “Experimental Demonstration of Ferroelectric Spiking Neurons for Unsupervised Clustering,” The 64th International Electron Devices Meeting (IEDM 2018), 13.3.1 (2018).
A. I. Khan , K. Chatterjee, B. Wang, S. Drapcho, L. You, C. Serrao, S. R Bakaul, R. Ramesh, & S. Salahuddin. “Negative capacitance in a ferroelectric capacitor,” Nature Materials 14, 182 (2015).
A. I. Khan, D. Bhowmik, P. Yu, S. J. Kim, X. Pan, R. Ramesh, & S. Salahuddin, “Experimental evidence of ferroelectric negative capacitance in nanoscale hetero- structures,” Appl. Phys. Lett. 99, 113501-1 (2011).
Last revised August 18, 2021