Asif Khan is an associate professor in the School of Electrical and Computer Engineering with a courtesy appointment in the School of Materials Science and Engineering at the Georgia Institute of Technology. He currently holds the onsemi Junior Professorship. Dr. Khan’s research focuses on microelectronic devices, specifically on ferroelectric devices that address the challenges faced by the semiconductor industry due to the end of transistor miniaturization. His research group at Georgia Tech focuses on all aspects of ferroelectricity ranging from materials physics, growth, and electron microscopy to micro-/nano-fabrication of electronic devices, all the way to ferroelectric circuits and systems for artificial intelligence, machine learning, and data-centric applications.
Dr. Khan’s notable awards include the DARPA Young Faculty Award (2021), the NSF CAREER Award (2021), the Intel Rising Star Award (2020), the Qualcomm Innovation Fellowship (2012), TSMC Outstanding Student Research Award (2011), and the University Gold Medal from Bangladesh University of Engineering and Technology (2011). His research portfolio includes 2 book chapters; >70 journal and peer-reviewed conference publications including in IEEE Transactions on Electron Devices, IEEE Electron Device Letters, Nature Electronics, Nature Materials, IEEE International Electron Devices Meeting (IEDM), Nano Letters, and Nature; >20 invited talks and tutorials at premier microelectronics and ferroelectric conferences including ISAF, IEDM, MRS, EMA, AVS, and EMA; and 1 pending patent with Intel. His group at Georgia Tech consists of six Ph.D. students of diverse backgrounds, including two female students, and 3 research engineers, many of whom won Institute-level and international awards, including an IEEE Electron Devices Society (EDS) Masters Student Fellowship. Dr. Khan developed a graduate course on Quantum Computing Devices and Hardware, as a part of the campus-wise response to national prioritization of quantum computing that is known as the National Quantum Initiative Act (NQIA). He received the Class of 1934 CIOS Honor Roll award for excellence in teaching this course in Fall 2020.
- Ph.D., Electrical Engineering and Computer Sciences, University of California, Berkeley, 2015
- B.S., Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology (BUET), 2007
Professor Khan’s research focuses on the design, analysis, and optimization of digital systems and embedded architectures. His work addresses challenges in system performance, energy efficiency, and reliable hardware implementation, emphasizing the integration of hardware and software components. His research program actively involves graduate and undergraduate students and contributes to advancing methodologies in computer architecture and embedded system design.
Professor Khan’s teaching interests encompass core electrical and computer engineering topics, including digital systems design, computer architecture, embedded systems, and hardware‑software integration. He is committed to delivering instruction that balances theoretical concepts with practical applications, aiming to prepare students for interdisciplinary challenges in modern engineering environments. His teaching approach involves engaging both undergraduate and graduate cohorts to foster deep understanding and skills development.
- DARPA Young Faculty Award (2021)
- NSF CAREER Award (2021)
- Intel Rising Star Award (2020)
- Qualcomm Innovation Fellowship (2012)
- University Gold Medal, Bangladesh University of Engineering and Technology (2011)
- P Venkatesan, L Fernandes, S Kang, P Ravikumar, T Song, C Park, ..., “Pushing the limits of NAND technology scaling with ferroelectrics,” MRS Bulletin, 2025.
- S Pinge, A Moradifirouzabadi, K Fan, PV Ravindran, TH Pantha, PK Hsu, ..., “FeNOMS: Enhancing Open Modification Spectral Library Search with In‑Storage Processing on Ferroelectric NAND Flash,” arXiv:2510.10872, 2025.
- Y Wang, MS Shahriar, S Soliman, N Vaillancourt, L Fernandes, ..., “A Dual‑Memory Ferroelectric Transistor Emulating Synaptic Metaplasticity for High‑Speed Reservoir Computing,” arXiv:2511.07830, 2025.
- H Kumarasubramanian, PV Ravindrin, TR Liu, T Song, M Surendran, ..., “Kinetic control of ferroelectricity in epitaxial barium titanate thin film capacitors,” APL Electronic Devices 1(4), 2025.
- T Song, AI Khan, “3D DRAM with stacked oxide‑semiconductor channel transistors: Memory,” Nature Electronics, 2025.