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Photo file: 
photograph of Abdallah Ougazzaden
Full name: 
Abdallah Ougazzaden
Job title: 
Professor
; Director of Georgia Tech-Lorraine; Co-President of Institut Lafayette
Technical Interest Groups: Nanotechnology, Optics and Photonics
Email address: 
Work phone: 
0033387203923
Fax: 
33 3 87 20 3940
Office: 
GTL

Abdallah Ougazzaden is a professor at the Georgia Institute of Technology (GIT)/School of Electrical and Computer Engineering; director of Georgia Tech-Lorraine, the European Campus of GIT in France; co-founder and co-president of Institut Lafayette (Lafayette Institute), a platform of innovation and technology transfer. He was a leader in creating the Joint International Research Lab between GIT and the Centre National de la Recherche Scientifique (CNRS) and then served as its director for three terms. 

Dr. Ougazzaden worked in R&D as a senior researcher and group leader at CNET/France Telecom (France) for more than eight years and one year at Optoplus/Alcatel (France) as optoelectronic materials group manager. In 1999, he joined Bell-Labs at Lucent Technologies (USA) as epitaxy and materials characterization manager for Optical Fiber Communication.  He kept this position with Agere Systems (USA), and then he worked as R&D and Fab Manager at TriQuint Semiconductor (USA). 

Dr. Ougazzaden joined Georgia Institute of Technology in 2005. His current research activity is in the field of wide bandgap semiconductors, 2D materials, and related devices for optoelectronic applications. He has authored more than 450 international scientific papers and communications and holds 26 patents. He contributed to the development of the first laser semiconductor at 1.3-micron for fiber telecommunication in France and its transfer to Alcatel.

A full list of Dr. Ougazzaden's publications may be found at here.

Research interests: 
  • Epitaxial growth of Nitride-based semiconductor materials by MOVPE
  • Epitaxial growth of InP based materials by MOVPE
  • Optoelectronic devices micro/nano fabrication
  • Materials Characterizations
  • III-V Semiconductor device physics
Distinctions: 
  • 2019 recipient of “La Légion d’Honneur,” the highest decoration in France on behalf of the French President
  • Member of National Academy of Metz since 2017
  • 2015 recipient of the first international Stellab Award from PSA Peugeot Citroen
  • Medale of City of Metz, France, 2014
  • 2013 Steven A. Denning Faculty Award for Global Engagement, Georgia Tech
  • CNET/France Telecom Award, 1990
  • Member of Organization Committee of European Workshop, MOVPE
  • Member of the International Advisory Committee, International Conference, MOVPE
  • Chair and organiser of the International Conference MOVPE 2008, Metz, France
  • Member of steering committee and expert on nanotechnology for the Parliamentary Office for Scientific and Technological Choices (OPECST)
  • Member Expert in French Research AgencyMember of steering committee and expert on nanotechnology for the Parliamentary Office for Scientific and Technological Choices (OPECST)
  • Member Expert in French Research Agency

Wu, Q., Guo, Y., Sundaram, S., Yan, J., Zhang, L., Wei, T., Wei, X., Wang, J., Ougazzaden, A., and Li, J. (2019), “Exfoliation of AlN film using two-dimensional multilayer hexagonal BN for deep-ultraviolet light-emitting diodes,” Appl. Phys. Express, 12(1), 015505.

El Huni, W., Karrakchou, S,. Halfaya, Y,. Arif, M,. Jordan, MB,. Puybaret, R,. Ayari, T,. Ennakrachi, H,. Bishop, C,. Gautier, S,. Ahaitouf, A,. Voss, PL, Salvestrini, JP, Ougazzaden, A., “Nanopyramid-based absorber to boost the efficiency of InGaN solar cells,” Solar Energy, volume 190 Pages 93-103, 2019.

Sundaram, S., Li, X., Halfaya, Y., Ayari, T., Patriarche, G., Bishop, C., Alam, S., Gautier S., Voss P. L., Salvestrini, J. P., Ougazzaden, A. (2019), “Large Area van der Waals Epitaxial Growth of Vertical III-Nitride Nanodevice Structures on Layered Boron Nitride”, Adv. Mater. Interfaces 2019, 1900207, (1-8)

Ayari, T., Sundaram, S., Bishop, C., Mballo A., Vuong, P., Halfaya, Y., Karrakchou, S., Gautier, S., Voss, P. L., Salvestrini, J. P., Ougazzaden, A. (2019) “Novel Scalable Transfer Approach for Discrete III-Nitride Devices Using Wafer-Scale Patterned h-BN/Sapphire Substrate for Pick-and-Place Applications”, Adv. Mater. Technol. 2019, 1900164

Jaewoo, S., Bae, S.-H., Kong, W., Lee, D., Qiao, K., Nezich, D., Park, Y. J., Zhao, R., Sundaram, S., Li*, X., Yeon, H., Choi, C., Kum, H., Yue, R., Zhou, G., Ou, Y., Lee, K., Moodera, J., Zhao, X., Hyun, J., Ougazzaden, A., and Kim, J., “Controlled crack propagation for atomic precision handling of wafer-scale two-dimensional materials”, Science, 362(6415), 665-670, 2018.

Kong, W., Li, H., Qiao, K., Kim, Y., Lee, K., Nie, Y., Lee, D., Osadchy, T., Molnar, R. J., Gaskill, D. K., Myers-Ward, R. L., Daniels, K. M., Zhang, Y., Sundaram, S., Yu, Y., Bae, S-H., Rajan, S., Shao-Horn, Y., Cho, K., Ougazzaden, A., Grossman, J. C., Kim, J., “Polarity governs atomic interaction through two-dimensional materials”, Nature Materials, 17(11), 999–1004, 2018.

Ayari, T., Sundaram, S., Li, X., Alam*, S., Bishop, C., El Huni, W., Jordan, M. B., Halfaya, Y., Gautier, S., Voss, P. L., Salvestrini, J. P., Ougazzaden, A., “Heterogeneous integration of thin-film InGaN-based solar cells on foreign substrates with enhanced performance”, ACS Photonics, 5 (8), 3003–3008, 2018.

Taha Ayari, Chris Bishop, Matthew B. Jordan, Suresh Sundaram, Xin Li, Saiful Alam, Youssef ElGmili, Gilles Patriarche, Paul L. Voss, Jean Paul Salvestrini, and Abdallah Ougazzaden, “Gas sensors boosted by two-dimensional h-BN enabled transfer on thin substrate foils: towards wearable and portable applications,” Scientific Reports 7, 15212, 2017.

X. Li, M.B. Jordan, T. Ayari, S. Sundaram, Y. El Gmili, S. Alam, M. Alam, G. Patriarche, P.L. Voss, J.P. Salvestrini, A. Ougazzaden, “Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE,” Scientific Reports, v. 7, art. 786 (2017).

Li, X , Sundaram, S., El Gmili, Y., Ayari, T., Puybaret, R., Patriarche, G., Ougazzaden, A. (2016). "Large-area two-dimensional layered hexagonal boron nitride grown on sapphire by metalorganic vapor phase epitaxy.” Crystal Growth & Design, 16 (6), 3409. http://doi.org/10.1021/acs.cgd.6b00

B. Mason, A. Ougazzaden, C.W. Lentz, K.G. Glogovsky, C.L. Reynolds, G.J. Przybylek, R. E. Leibenguth, T. L. Kercher, J. W. Boardman, M. T. Rader, J. M. Geary, F.S. Walters, L. J. Peticolas, J. M. Freund, S. N. G. Chu, A. Sirenko, and R. J. Jurchenko, "40-Gbit/s tandem electroabsorption modulator", IEEE Photonics Technology Letters, vol. 14, issue 1, pp. 27-29, January 2002.

A. Ougazzaden, Y. Le Bellego, E. V. K. Rao, M. Juhel, L. Leprince, and G.Patriarche, “Metal organic vapor phase epitaxy growth of GaAsN on GaAs using dimethylhydrazine and tertiarybutylarsine,” Appl. Phys Lett. 70, 2861 (1997)

Last revised December 8, 2020