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ECE Course Syllabus

ECE6453 Course Syllabus

ECE6453

Theory of Electronic Devices (3-0-3)


Technical Interest
Group
Nanotechnology

Prerequisites
ECE 6451

Corequisites
None

Catalog Description
Presents the fundamentals of electronic device operation

Textbook(s)
Brennan & Brown, Theory of Modern Electronic Semiconductor Devices, John Wiley, 2002. ISBN 9780471415411 (required)


Strategic
Performance
Indicators (SPIs)
SPIs are a subset of the abilities a student will be able to demonstrate upon successfully completing the course.

Outcome 1 (Students will demonstrate expertise in a subfield of study chosen from the fields of electrical engineering or computer engineering):
1.	Demonstrate understanding of the influence of materials and geometry on the electrical characteristics of field effect and bipolar devices

Outcome 2 (Students will demonstrate the ability to identify and formulate advanced problems and apply knowledge of mathematics and science to solve those problems):
1.	Assess the dependence of band diagrams, electrostatic potential and electric field as a function of bias condition for field effect and bipolar devices.
2.     Construct small-signal equivalent circuit models for field effect and bipolar devices to assess relevant electrical figures of merit.


Outcome 3 (Students will demonstrate the ability to utilize current knowledge, technology, or techniques within their chosen subfield):
1.	N//A

Topical Outline
I.  Electronic Device Physics
    A.  Advanced p-n junction analysis
    B.  MOS analysis
    C.  Metal semiconductor contacts
    D.  Breakdown-tunneling and impact ionization
    E.  Field effect
    F.  Ambipolar transport
    G.  Heterojunction formation and analysis
    H.  Modulation doping

II.  Field Effect Transistors
    A.  JFET
    B.  MESFET
    C.  MOSFET
    D.  HEMT
    E.  Charge control and I-V characteristics
    F.  Equivalent circuit models
    G.  Application-specific issues: low power and high frequency designs.

III.  Bipolar transistors
    A.  Charge control and I-V characteristics
    B.  HBTs
    C.  Equivalent circuit models
    D.  Application-specific issues: low power and high frequency designs.