Photo file: 
Full name: 
Shyh-Chiang Shen
Job title: 
Technical Interest Groups: Nanotechnology
Email address: 
Work phone: 
BH 307

Shyh-Chiang Shen received his B.S. and M.S. degrees, both in electrical engineering, from National Taiwan University in 1993 and 1995, respectively. He received his Ph.D. degree in electrical engineering at the University of Illinois at Urbana-Champaign (UIUC) in 2001. During his graduate study at the University of Illinois, he was involved in the development of low-voltage RF MEMS switches and ion-implanted GaAs MESFET using e-beam direct gate-writing photolithography techniques.

Dr. Shen joined Xindium Technologies, Inc. as a senior processing engineer in June 2001. He developed a proprietary high-performance InP SHBT technology for 40Gb/s OEIC applications and InP-based power HBT technology for wireless communications. In August 2004, he joined the HSIC group at the University of Illinois as a postdoctoral research associate to work on exciting research projects. In January 2005, he joined the Georgia Institute of Technology as an Assistant Professor. Dr. Shen holds 7 awarded U.S. patents in the MEMS and microelectronics areas. His current research is focused on wide bandgap semiconductor microelectronics and optoelectronic devices for high-energy-efficiency applications.

Research interests: 
  • High sensitivity, nitride-based UV optoelectronics: detectors and emitters
  • III-N-based high-voltage field-effect transistors
  • III-N heterojunction bipolar transistors
  • Advanced semiconductor fabrication techniques
  • Integrated circuits technologies
  • Gregory E. Stillman Semiconductor Research Award, 2000, UIUC
  • Gregory E. Stillman Fellowship, 2001, UIUC
  • TPC member & Session Chair, International Conference on Compound Semiconductor Manufacturing Technology (CSMANTECH) (2006- )
  • Senior Member, IEEE (2007- )
  • Richard M. Bass Outstanding Teacher Award, 2010
  • Outstanding Junior Faculty Member Award, School of ECE, Georgia Tech, 2011

"GaN/InGaN heterojunction bipolar transistors with fT > 5 GHz," S.-C. Shen, R. D. Dupuis, Y.-C. Lee, H.-J. Kim, Y. Zhan, Z. Lochner, P. D. Yoder, and J.-H. Ryou, IEEE Electron Device Letters, vol. 32, no. 8, pp. 1065-1067, August 2011.

"2.5 Ampere AlGaN/GaN HFETs on Si substrates with breakdown voltage > 1250 V," T.-T. Kao, C.-Y. Wang, S.-C. Shen, D. Girdhar, and F. Hebert, in the Technical Digest of 2011 CSMANTECH Conference, Palm Springs, CA, May 16-19, 2011.

"Effects of a step-graded AlxGa1-xN electron blocking layer in InGaN-based laser diodes," Y. Zhang, T.-T. Kao, J.-P. Liu, Z. Lochner, S.-S. Kim, J.-H. Ryou, R. D. Dupuis, and S.-C. Shen, Journal of Applied Physics, vol. 109, p. 083115, 26 April 2011.

"High-current-gain direct-growth GaN/InGaN double heterojunction bipolar transistors," Y.-C. Lee, Y. Zhang, H.-J. Kim, S. Choi, Z. Lochner, R. D. Dupuis, J.-H. Ryou, and S.-C. Shen, IEEE Transactions on Electron Devices, vol. 57, no. 11, pp. 2964-2969, November 2010.

"Surface leakage in GaN/InGaN double heterojunction bipolar transistors," S.-C. Shen, Y.-C. Lee, H.-J. Kim, Y. Zhang, S. Choi, R. D. Dupuis, and J.-H. Ryou, IEEE Electron Device Letters, vol. 30, no. 11, pp. 1119-1121, November 2009.

"Low-noise GaN ultraviolet p-i-n photodiodes on GaN substrates," Y. Zhang, S.-C. Shen, H.-J. Kim, S. Choi, J.-H. Ryou, R. D. Dupuis, and B. Narayan, Applied Physics Letters, vol. 94, pp. 221109, June 4, 2009.

"Device Technologies for RF Front-end Circuits in the Next Generation Wireless Communications," M. Feng, S.C. Shen, D. Caruth, and J-J Huang, invited paper, in Proc. IEEE, vol. 92, no.2, pp. 354-375, Feb. 2004.

Last revised August 15, 2018

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