Russell D. Dupuis earned all of his academic degrees from the University of Illinois at Urbana-Champaign. He received his bachelor's degree with "Highest Honors-Bronze Tablet" in 1970. He received his master's in electrical engineering in 1971, and his Ph.D. degree in 1973. His alma mater has honored him with the University of Illinois Alumni Loyalty Award, and the Distinguished Alumnus Award. Dr. Dupuis worked at Texas Instruments from 1973 to 1975. In 1975, he joined Rockwell International where he was the first to demonstrate that MOCVD could be used for the growth of high-quality semiconductor thin films and devices. He joined AT&T Bell Laboratories in 1979 where he extended his work to the growth of InP-InGaAsP by MOCVD. In 1989 he became a chaired professor at the University of Texas at Austin. In August 2003, he was appointed Steve W. Chaddick Chair in Electro-Optics at Georgia Tech in ECE. He is currently studying the growth of III-V compound semiconductor devices by MOCVD, including materials in the InAlGaN/GaN, InAlGaAsP/GaAs, InAlGaAsSb, and InAlGaAsP/InP systems.
- semiconductor materials and devices
- epitaxial growth by metalorganic chemical vapor deposition
- heterojunction structures in III-V compound semiconductors
International SSL Alliance Award of Outstanding Achievement for Global Solid State Lighting Development (2016)
National Academy of Engineering Charles Stark Draper Engineering Award (2015). With I. Akasaki, M. G. Craford, N. Holonyak, Jr., and S. Nakamura
The Institute of Electrical and Electronics Engineers IEEE Life Fellow Award (2015)
Elected Fellow of the National Academy of Inventors (2014)
Alexander von Humboldt Research Award, Alexander von Humboldt Foundation, Germany (2013)
IEEE Edison Medal, The Institute of Electrical and Electronics Engineers (2006)
John Bardeen Award, The Minerals, Metals, and Materials Society (2004)
Fellow of the American Association for the Advancement of Science (2003)
Fellow of the American Physical Society (2003)
Laureate, United States National Medal of Technology (2002)
Fellow of the Optical Society of America (2000)
IEEE/LEOS Award for Engineering Achievement (1995)
Elected to National Academy of Engineering (1989)
Fellow of the Institute of Electrical and Electronics Engineers (1986)
IEEE Morris N. Liebmann Memorial Field Award (1985)
X. Li, S. Wang, H. Liu, F. A. Ponce, T. Detchphrom, and R. D. Dupuis, “100nm thick single-phase wurtzite BAlN films with boron contents over 10%," Phys. Stat. Sol. (b), Vol. pp. 1600699 (2017).
T. Detchprohm, Y.-S. Liu, K. Mehta, S. Wang, H. Xie, T.-T. Kao, S.-C. Shen, P. D. Yoder, F. A. Ponce, and R. D. Dupuis, “Sub 250nm deep-UV AlGaN/AlN distributed Bragg reflectors,” Appl. Phys. Lett., Vol. 110, No. 1, pp. 011105-1 -5 (2016).
T.-T. Kao, J. Kim, T. Detchprohm, R. D. Dupuis, and S.-C. Shen, “High-responsivity GaN-InGaN heterojunction phototransistors,” IEEE Photon. Tech Lett., Vol. 28, No. 19, pp. 2035-2038 (2016).
Y.-S. Liu, A. F. M. S. Haq, K. Mehta, T.-T. Kao, S. Wang, H. Xie, S.-C. Shen, P. D. Yoder, F. A. Ponce, T. Detchprohm, R. D. Dupuis, H. Xie, “Optically pumped vertical-cavity surface-emitting laser at 374.9nm with an electrically conducting n-type distributed Bragg reflector,” Appl. Phys. Exp., Vol. 9, No. 11, pp. 111002-1-3 (2016).
J. Kim, M.-H. Ji, T. Detchprohm, R. D. Dupuis, S. Shervin, and J.-H. Ryou, “Effect of Lattice-Matched InAlGaN Electron-Blocking Layer on Hole Distribution in InGaN/GaN Multiple Quantum Wells of Visible Light-Emitting Diodes,” Phys. Stat. Sol. A, Vol. 213, No. 5, pp. 1296-1301 (2016).
J. Kim, M.-H. Ji, T. Detchprohm, R. D. Dupuis, S. Shervin, and J.-H. Ryou, “Effect of lattice-matched InAlGaN electron-blocking layer on hole transport and distribution in InGaN/GaN multiple quantum wells of visible light-emitting diodes”, Phys. Stat. Sol.(A), Vol. 213, No. 5, pp. 1296-1301, (2016).
S. Kim, J.-H. Ryou, R. D. Dupuis, and H. Kim, “Reduced gate leakage current of AlInN:Mg/GaN high electron mobility transistors,” Electron. Lett., Vol. 52, No. 2, pp. 157-159 (2016).
Y.-S. Liu, A. F. M. S. Haq, T.-T. Kao, K. Mehta, S.-C. Shen, T. Detchprohm, P. D. Yoder, R. D. Dupuis, H. Xie, F. A. Ponce, “Electrically conducting n-type AlGaN/GaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition”, J. of Cryst Growth, Vol. 443, pp. 81-84 (2016).
Y.-S. Liu, S. Wang, H. Xie, T.-T. Kao, K. Mehta, J. J. Xiao, S.-C. Shen, P. D. Yoder, F. A. Ponce, T. Detchphrom, and R. D. Dupuis, “Strain management of AlGaN-based distributed Bragg Reflectors with GaN interlayer grown by metalorganic chemical vapor deposition,” Appl. Phys. Lett., Vol. 109, No. 9, pp. 081103-1-5 (2016).
M.-H Ji, J. Kim, T. Detchprohm, R. D. Dupuis, A. K. Sood, N. K. Dhar, and J. Lewis, “Uniform and Reliable GaN p-i-n Ultraviolet Avalanche Photodiode Arrays”, IEEE Photon. Technol. Lett., Vol. 28, No. 19, pp. 2015-2018 (2016).
X. Li, X, G. Le Gac, S. Bouchoule, Y. El Gmili, G. Patriarche, S. Sundaram, P. Disseix, F, Re´veret, J. Leymarie, J. Streque, F. Genty, J.-P. Salvestrini, R.-D. Dupuis, X.-H. Li, P. L. Voss, A. Ougazzaden, “Structural and optical investigations of AlGaN MQWs grown on a relaxed AlGaN buffer on AlN templates for emission at 280 nm,” J. Cryst. Growth, Vol. 432, pp. 37-44 (2015).
T.-T. Kao, J. Kim. Y.-C. Lee, A. Haq, M.H. Ji, T. Detchprohm, R. Dupuis and S.-C. Shen, “Temperature Dependent Characteristics of GaN Homojunction Rectifiers,” IEEE Trans. Electron Devices, Vol. 62, No. 8, pp. 2679-2683, (2015).
T.-T. Kao, Y.-C. Lee, J. Kim, H. Kim, T. Detchprohm, R. D. Dupuis, and S.-C. Shen, “Radiative recombination in GaN/InGaN heterojunction bipolar transistors,” Appl. Phys. Lett. Vol. 107, No. 24, pp. 242104-1-4 (2015).
Y.-S. Liu, T.-T. Kao, M. Satter, Z. Lochner, S.-C. Shen, T. Detchprohm, P. D. Yoder, R. D. Dupuis, J.-H. Ryou, A. M. Fischer, Y. O. Wei, H. Xie, and F. A. Ponce, “Inverse-Tapered p-Waveguide for Vertical Hole Transport in High-[Al] AlGaN Emitters,” IEEE Photon. Tech. Lett., Vol. 27, No. 16, pp. 1768-1771 (2015).
J. Kim, M.-H. Ji, T. Detchprohm, R. D. Dupuis, A. M. Fischer, F. A. Ponce, and J.-H. Ryou, “Effect of Group-III Precursors on Unintentional Gallium Incorporation During Epitaxial Growth of InAlN Layers by Metalorganic Chemical Vapor Deposition,” J. Appl. Phys., Vol. 118, No. 12, pp. 1253031-6 (2015).
Last revised March 9, 2017