Professor Azad Naeemi to Debate at the International Electron Devices Meeting
On December 7th thru the 9th members of the electronics device and semiconductor research and industry community will gather in Washington DC for the 2015 International Electron Devices Meeting. This year, in addition to the standard keynote, plenary, presentation and poster sessions, prominent researchers in the area of interconnects will take the stage for a panel debate, presidential style. The topic of the debate, “Is there a potential for a revolution in on-chip interconnect?”will explore interconnect scaling solutions for future electronics. Thepanel will consist of six “candidate” debaters who will open with timed statements of their technical solutions, and will be required to answer questions, also within a time limited format. At the conclusion of the evening event, attendees will have the opportunity to vote on who “won” the debate for the future of interconnects. Professor Azad Naeemi, School of Electrical and Computer Engineering and the Institute for Electronics and Nanotechnology, will be representing Georgia Tech in the debate with his solution, “Nano/novel materials or devices to the rescue”.
The IEEE International Electron Devices Meeting (IEDM) is the world’s preeminent forum for reporting technological breakthroughs in the areas of semiconductor and electronic device technology, design, manufacturing, physics, and modeling. IEDM is the flagship conference for nanometer-scale CMOS transistor technology, advanced memory, displays, sensors, MEMS devices, novel quantum and nano-scale devices and phenomenology, optoelectronics, devices for power and energy harvesting, high-speed devices, as well as process technology and device modeling and simulation.
Last revised August 1, 2017