Ph.D. Dissertation Defense - Zachary Fleetwood

Event Details

Tuesday, February 20, 2018

10:30am - 12:00pm

Room 509, TSRB

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Event Details

TitleQualifying Silicon-germanium Electronics for Harsh Radiation Environments


Dr. John Cressler, ECE, Chair , Advisor

Dr. Doug Yoder, ECE

Dr. Eric Vogel, MSE

Dr. Muhannad Bakir, ECE

Dr. Britney Schmidt, EAS


This work investigates silicon-germanium heterojunction bipolar transistors (SiGe HBTs) for radiation-intense applications and spaceflight hardware consideration. Both total ionizing dose and single-event effects are discussed. The first ever implementation of radiation-hardening-by-process (RHBP) in SiGe HBTs is presented. Experimental results and 3D modeling efforts from this research is leveraged to advance the use of two-photon absorption pulsed-laser experimentation in place of standard heavy-ion testing with a particle accelerator.

Last revised February 6, 2018