Plasma Etch

Plasma etching is done to pattern the gate region of the PMOS transistors. The following steps make up the plasma etch process:

Prepare Chamber

Prepare the chamber by verifying the following: 

	1) Vacuum pump is ON
	2) Oxygen tank is ON
	3) Main Power to Technics Machine is ON

Load Wafers

Lift the chamber lid, and load the wafers.

Plasma Etch

After the wafers are loaded, lower the chamber door, and push the Start/Stop button. This will start the etching system's automatic sequence.

This picture doesn't clearly show it, but looking through this window you should be able to see the oxygen plasma.

Remove Wafers

After the plasma etch is completed (typically 5-30 minutes for our PMOS process), the chamber will automatically vent by itself. The lid can then be raised and the wafers removed.

The wafers are taken immediately to the sinter/anneal process step.

Simulation

The Deposition Calculator calculates the implant thickness. Once you have entered the appropriate values, press the execute button. The implant thickness in micrometers will appear in the output field.

Back to the Process Page.