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School of Electrical and Computer Engineering

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Faculty Profile - Russell Dean Dupuis

Professor; Steve W. Chaddick Endowed Chair in Electro-0ptics; Georgia Research Alliance Eminent Scholar
Microelectronics/Microsystems, and Optics and Photonics

Phone: 404.385.6094
Fax: 404.385.6096
Office: BH 201

Selected Publications, Patents

  • Y.-C. Lee, Y. Zhang, Z. Lochner, H. J. Kim, J.-H. Ryou, R. D. Dupuis, and S.-C. Shen, "GaN/InGaN heterojunction bipolar transistors with ultra-high d.c. power density (>3MW/cm2)," Phys. Stat. Sol. (a) 209 (3), 497–500 (2012).
  • Kim, S., Kim, H.J., Choi, S., Lochner, Z., Ryou, J.-H., Dupuis, R.D., Kim, H., "Carrier transport properties of Mg-doped InAlN films," Electronics Letters, 48(20), 1306-8 (2012).
  • S. Choi, M-H Ji, J. Kim., H-J Kim, M.M. Satter., P.D. Yoder., J-H Ryou, R.D., A.M. Fischer , F.A. , "Efficiency droop due to electron spill-over and limited hole injection in III-nitride visible light-emitting diodes employing lattice-matched InAlN electron blocking layers," APL, 101(16), 161110-5(2012).
  • Zhang, Y. , Liu, J.-P., Kao, T.-T., Kim, S., Lee, Y.-C., Lochner, Z., Ryou, J.-H., Yoder, P.D., Dupuis, R.D., Shen, S.-C., "Performance enhancement of InGaN-based laser diodes using a step-graded AlxGa1-xN electron blocking layer," Intl. Journal of High Speed Electronics and Systems, 20 (3), 515-20 (2011).
  • Y. Zhang, Y.-C. Lee, Z. Lochner, H. J. Kim, S. Choi, J.-H. Ryou, R. D. Dupuis, and S.-C. Shen, "High-performance GaN/InGaN double heterojunction bipolar transistors with power density >240 kW/cm2,” Phys. Stat. Sol. (c) 8 (7–8), 2451–2453 (2011).
  • J.-H. Ryou and R. D. Dupuis, "Focus Issue Introduction: Optics in LEDs for lighting," Opt. Exp. 19 (S4), A897–A899 (2011).
  • Y. Huang, J.-H. Ryou, R. D. Dupuis, D. Zuo, B. Kesler, S.-L. Chuang, H. Hu, K.-H. Kim, Y. T. Lu, and J.-M. Zuo, "Strain-balanced InAs/GaSb type-II superlattice structures and photodiodes grown on InAs substrates by metalorganic chemical vapor deposition," Appl. Phys. Lett. 99 (1), 011109-1–3 (2011).
  • S.-C. Shen, R. D. Dupuis, Y.-C. Lee, H. J. Kim, Y. Zhang, Z. Lochner, P. D. Yoder, and J.-H. Ryou, "GaN/InGaN heterojunction bipolar transistors with fT > 5 GHz," IEEE Electron Device Lett. 32 (8), 1065–1067 (2011).
  • Z. Lochner, H. J. Kim, Y.-C. Lee, Y. Zhang, S. Choi, S.-C. Shen, P. D. Yoder, J.-H. Ryou, and R. D. Dupuis, "NpN-GaN/InxGa1-xN/GaN heterojunction bipolar transistor grown on free-standing GaN substrate," Appl. Phys. Lett. 99 (19), 193501-1–3 (2011).
  • R. Blanchard, S. Menzel, C. Pflugl, L. Diehl, C. Wang, Y. Huang., J.-H. Ryou, R. D. Dupuis, L. Dal Negro, and F. Capasso, "Gratings with an aperiodic basis: single-mode emission in multi-wavelength lasers," New J. Phys. 13 (11), 113023-1–13 (2011).

Biography

Last revised on May 22, 2013.