Faculty Profile - Russell Dean Dupuis
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Professor; Steve W. Chaddick Endowed Chair in Electro-0ptics; Georgia Research Alliance Eminent Scholar Microelectronics/Microsystems, and Optics and Photonics Phone: 404.385.6094 Fax: 404.385.6096 Office: BH 201 |
Selected Publications, Patents
- U. Chowdhury, M. M. Wong; C. J. Collins; B. Yang; J. C. Denyszyn, J. C. Campbell; and R. D. Dupuis, “High-Performance Solar-Blind Photodetector Using and Al0.6Ga0.4N n-type Window Layer,” J. Crys. Growth, Vol. 248, pp. 552-555 (2003).
- M. S. Noh, R. D. Dupuis, D. P. Bour, G. Walter, and N. Holonyak, Jr., “Long-Wavelength Strain-Compensated GaAsSb Quantum-Well Heterostructure Lasers Grown by Metalorganic Chemical Vapor Deposition,” Appl. Phys. Lett., accepted for publication (2003).
- T. G. Zhu, U. Chowdhury, M. M. Wong, J. C. Denyszyn, M. M. Wong, and R. D. Dupuis, AlGaN/AlGaN UV Light-Emitting Diodes Grown on Sapphire Substrates by Metalorganic Chemical Vapor Deposition,” J. Crys. Growth, Vol. 248, pp. 548-551 (2003).
- X. B. Zhang, R. D. Heller, M. S. Noh, R. D. Dupuis, G. Walter, and N. Holonyak, Jr., “Growth of InP Quantum Dots on Vicinal GaAs (100) Substrates by Metalorganic Chemical Vapor Deposition,” Appl. Phys. Lett. (to be published 2003).
- M. M. Wong, U. Chowdhury, D. Sicault, J. H. Choi, T. G. Zhu, J. C. Denyszyn, R. D. Dupuis, D. T. Becher, and M. Feng, “Improved Performance of AlGaN/GaN Heterojunction Field-Effect Transistors Using Delta Doping and a Binary Barrier,” Jap. J. Appl. Phys., Vol. 42, pp. L353-L355 (2003).
- G. Walter, N. Holonyak, Jr., R. D. Heller, and R. D. Dupuis, “Visible Spectrum (654nm) Room Temperature Continuous Wave InP Quantum Dot Coupled to InGaP Quantum Well InP-InGaP-In(AlGa)P-InAlP Heterostructure Laser,” Appl. Phys. Lett., Vol. 81, No. 24, pp. 4604-4606 (2002.)
Last revised on January 20, 2006.

