Faculty Profile - Russell Dean Dupuis

Professor; Steve W. Chaddick Endowed Chair in Electro-0ptics; Georgia Research Alliance Eminent Scholar
Microelectronics/Microsystems, and Optics and Photonics

Phone: 404.385.6094
Fax: 404.385.6096
Office: BH 201

Selected Publications, Patents

U. Chowdhury, M. M. Wong; C. J. Collins; B. Yang; J. C. Denyszyn, J. C. Campbell; and R. D. Dupuis, “High-Performance Solar-Blind Photodetector Using and Al0.6Ga0.4N n-type Window Layer,” J. Crys. Growth, Vol. 248, pp. 552-555 (2003).
M. S. Noh, R. D. Dupuis, D. P. Bour, G. Walter, and N. Holonyak, Jr., “Long-Wavelength Strain-Compensated GaAsSb Quantum-Well Heterostructure Lasers Grown by Metalorganic Chemical Vapor Deposition,” Appl. Phys. Lett., accepted for publication (2003).
T. G. Zhu, U. Chowdhury, M. M. Wong, J. C. Denyszyn, M. M. Wong, and R. D. Dupuis, AlGaN/AlGaN UV Light-Emitting Diodes Grown on Sapphire Substrates by Metalorganic Chemical Vapor Deposition,” J. Crys. Growth, Vol. 248, pp. 548-551 (2003).
X. B. Zhang, R. D. Heller, M. S. Noh, R. D. Dupuis, G. Walter, and N. Holonyak, Jr., “Growth of InP Quantum Dots on Vicinal GaAs (100) Substrates by Metalorganic Chemical Vapor Deposition,” Appl. Phys. Lett. (to be published 2003).
M. M. Wong, U. Chowdhury, D. Sicault, J. H. Choi, T. G. Zhu, J. C. Denyszyn, R. D. Dupuis, D. T. Becher, and M. Feng, “Improved Performance of AlGaN/GaN Heterojunction Field-Effect Transistors Using Delta Doping and a Binary Barrier,” Jap. J. Appl. Phys., Vol. 42, pp. L353-L355 (2003).
G. Walter, N. Holonyak, Jr., R. D. Heller, and R. D. Dupuis, “Visible Spectrum (654nm) Room Temperature Continuous Wave InP Quantum Dot Coupled to InGaP Quantum Well InP-InGaP-In(AlGa)P-InAlP Heterostructure Laser,” Appl. Phys. Lett., Vol. 81, No. 24, pp. 4604-4606 (2002.)

Biography

Last revised on January 20, 2006.