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Faculty Profile - William A Doolittle

Associate Professor
Microelectronics/Microsystems

Phone: 404.894.9884
Fax: 404.894.9884
Office: MIRC 209

http://users.ece.gatech.edu/~alan

Biography

Professor Doolittle is a native of Atlanta, Georgia. After attending Clayton junior college for two years on a "John West" full academic scholarship, he transferred to Georgia Tech where he graduated with a Bachelors of Electrical Engineering with highest honors in 1989. He later received his Ph.D. in electrical engineering in 1996 from Georgia Tech.

His thesis work revolved around identifying the device limiting defects in photovoltaic silicon materials using several custom designed tools. He later worked for four years as a Research Engineer II in the area of compound semiconductor growth with emphasis on wide bandgap semiconductors. He joined the Georgia Tech faculty in 2001.

During his time at Georgia Tech he has helped develop academic programs in the areas of microelectronic fabrication, materials growth and measurement system design. Professor Doolittle consults with industry in the areas of materials testing, MBE growth, and test equipment development.

His hobbies include classic cars, playing the guitar, and reading. Most of his free time is spent with his wife and two young children.

Selected Publications, Patents

Research Interests
  • Wide bandgap semiconductor materials and devices
  • Dielectric materials growth and characterization
  • Electrical, optical and structural characterization and optimization of Electronic materials and devices
  • Microelectronic device/circuit fabrication
  • Radio frequency power electronic devices
Distinctions
  • Lockheed Martin Aeronautics Company Dean's Award for Teaching Excellence
  • Was awarded US Patent #5,521,839 for a Deep Level Transient Spectroscopy System and Method
  • Session Chair for Electronic Materials Conference
  • Frequent reviewer for: Review of Scientific Instruments, Journal of Electrochemical Society Letters, Proceedings of the Materials Research Society, IEEE Electron Device Society

Last revised on July 25, 2006.