Faculty Profile - Shyh-Chiang Shen
Office: BH 353
Selected Publications, Patents
- "GaN/InGaN heterojunction bipolar transistors with fT > 5 GHz," S.-C. Shen, R. D. Dupuis, Y.-C. Lee, H.-J. Kim, Y. Zhan, Z. Lochner, P. D. Yoder, and J.-H. Ryou, IEEE Electron Device Letters, vol. 32, no. 8, pp. 1065-1067, August 2011.
- "2.5 Ampere AlGaN/GaN HFETs on Si substrates with breakdown voltage > 1250 V," T.-T. Kao, C.-Y. Wang, S.-C. Shen, D. Girdhar, and F. Hebert, in the Technical Digest of 2011 CSMANTECH Conference, Palm Springs, CA, May 16-19, 2011.
- "Effects of a step-graded AlxGa1-xN electron blocking layer in InGaN-based laser diodes," Y. Zhang, T.-T. Kao, J.-P. Liu, Z. Lochner, S.-S. Kim, J.-H. Ryou, R. D. Dupuis, and S.-C. Shen, Journal of Applied Physics, vol. 109, p. 083115, 26 April 2011.
- "High-current-gain direct-growth GaN/InGaN double heterojunction bipolar transistors," Y.-C. Lee, Y. Zhang, H.-J. Kim, S. Choi, Z. Lochner, R. D. Dupuis, J.-H. Ryou, and S.-C. Shen, IEEE Transactions on Electron Devices, vol. 57, no. 11, pp. 2964-2969, November 2010.
- "Surface leakage in GaN/InGaN double heterojunction bipolar transistors," S.-C. Shen, Y.-C. Lee, H.-J. Kim, Y. Zhang, S. Choi, R. D. Dupuis, and J.-H. Ryou, IEEE Electron Device Letters, vol. 30, no. 11, pp. 1119-1121, November 2009.
- "Low-noise GaN ultraviolet p-i-n photodiodes on GaN substrates," Y. Zhang, S.-C. Shen, H.-J. Kim, S. Choi, J.-H. Ryou, R. D. Dupuis, and B. Narayan, Applied Physics Letters, vol. 94, pp. 221109, June 4, 2009.
- "Device Technologies for RF Front-end Circuits in the Next Generation Wireless Communications," M. Feng, S.C. Shen, D. Caruth, and J-J Huang, invited paper, in Proc. IEEE, vol. 92, no.2, pp. 354-375, Feb. 2004.
Last revised on August 29, 2011.